Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for forming semiconductor layers of different thickness in FDSOI technologies

Process for forming semiconductor layers of different thickness in FDSOI technologies

US Patent 10141229 · Granted Nov 27, 2018

Estimated economic value: $55,245,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Lateral transistor with self-aligned body implant2025
High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG)2023
Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors2022
Back-gate biasing voltage divider topology circuit structure2020
Method of forming a semiconductor device structure using differing spacer widths2018
Reducing antenna effects in SOI devices2017
Method of forming a gate mask for fabricating a structure of gate lines2016
Semiconductor structure including at least one electrically conductive pillar, s2016
SOI transistor having drain and source regions of reduced length and a stressed 2016
Shallow pn junction formed by in situ doping during selective growth of an embed2014
Self-aligned silicidation for replacement gate process2014
Semiconductor device with reduced threshold variability having a threshold adjus2014