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Home › Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process

Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process

US Patent 8906811 · Granted Dec 9, 2014

Estimated economic value: $981,000 ⓘ

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