Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › FET structures with trench implantation to improve back channel leakage and body resistance

FET structures with trench implantation to improve back channel leakage and body resistance

US Patent 8236632 · Granted Aug 7, 2012

Estimated economic value: $7,112,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for process window optimization in a virtual semiconductor dev2025
Channel pre-charge process in a memory device2025
Three-dimensional nor array and method of making the same2025
Heterojunction bipolar transistors with a cut stress liner2025
Compute in memory three-dimensional non-volatile nor memory for neural networks2025
Semiconductor devices with single-photon avalanche diodes and isolation structur2025
Trench isolation having three portions with different materials, and LDMOS FET i2025
Configurable capacitors with 3D non-volatile array2025
Field effect transistors with gate fins and method of making the same2025
Preparation method for bio-based nucleating agent for poly(ethylene furandicarbo2025
Laterally-diffused metal-oxide-semiconductor devices with an air gap2025
Laser printer2024