Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Deposition method for high-k dielectric materials

Deposition method for high-k dielectric materials

US Patent 7704895 · Granted Apr 27, 2010

Estimated economic value: $12,857,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming low-resistivity Ru ALD through a bi-layer process and related 2025
Method of forming low-resistivity Ru ALD through a bi-layer process and related 2025
Plasma enhanced atomic layer deposition of silicon-containing films2025
Nanosheet transistor devices and related fabrication methods2025
Dynamic precursor dosing for atomic layer deposition2025
Modulated atomic layer deposition2025
Multi-station semiconductor processing with independently adjustable pedestals2025
Impurity reduction in silicon-containing films2025
Ultrathin atomic layer deposition film accuracy thickness control2025
Stacked transistors having an isolation region therebetween and a common gate el2025
Rapid tuning of critical dimension non-uniformity by modulating temperature tran2025
Integrated dry processes for patterning radiation photoresist patterning2025