Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming self-passivating interconnects and resulting devices

Method of forming self-passivating interconnects and resulting devices

US Patent 7402509 · Granted Jul 22, 2008

Estimated economic value: $18,979,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Vertically spaced intra-level interconnect line metallization for integrated cir2025
Vertically spaced intra-level interconnect line metallization for integrated cir2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Filter structure and filter device2025
Integrated circuit structures with backside self-aligned penetrating conductive 2025
Resonance circuit and filtering device2025
Semiconductor device package and methods of formation2025
Gate-all-around integrated circuit structures having backside contact with enhan2025
Reduction of cracks in redistribution structure2025
Fan-out package structures with cascaded openings in enhancement layer2025
Transistor with front-side and back-side contacts and routing2025