Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for determining projected lifetime of semiconductor devices with analytical extension of stress voltage window by scaling of oxide thickness

Method for determining projected lifetime of semiconductor devices with analytical extension of stress voltage window by scaling of oxide thickness

US Patent 7340360 · Granted Mar 4, 2008

Estimated economic value: $9,869,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Forming self-aligned vias and air-gaps in semiconductor fabrication2025
Semiconductor structure and fabrication method thereof2025
Stacked transistors with different channel widths2025
Integrated circuit devices and fabrication techniques2025
Threshold adjustment for quantum dot array devices with metal source and drain2024
Silicon on insulator device with partially recessed gate2024
Integrated circuit devices and fabrication techniques2023
Atomic layer deposition of selected molecular clusters2023
Method of making interconnect structure having ferroelectric capacitors exhibiti2023
Gate all around vacuum channel transistor2023
Low power biological sensing system2023
Stacked transistors with different channel widths2022