Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming alignment features and back-side contacts with fewer lithography and etch steps

Method for forming alignment features and back-side contacts with fewer lithography and etch steps

US Patent 6979651 · Granted Dec 27, 2005

Estimated economic value: $8,074,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Mask for forming integrated circuit2014
Systems and methods that control liquid temperature in immersion lithography to 2013
Formation of FinFET gate spacer2013
Methods for fabricating FinFET semiconductor devices using planarized spacers2012
Formation of FinFET gate spacer2012
System and method for imprint lithography to facilitate dual damascene integrati2011
Method for fabricating a semiconductor device having a semiconductive resistor s2011
Method of providing context specific recipes in a semiconductor facility by defi2011
Methods for forming small contacts2011
Method and apparatus for monitoring endcap pullback2010
Resist trim process to define small openings in dielectric layers2010
System and method for imprint lithography to facilitate dual damascene integrati2010