Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor element having an anisotropic high-k gate dielectric

Transistor element having an anisotropic high-k gate dielectric

US Patent 6911404 · Granted Jun 28, 2005

Estimated economic value: $6,294,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Drive current adjustment for transistors by local gate engineering2012
Etch stop layer of reduced thickness for patterning a dielectric material in a c2012
Method for reducing defects of gate of CMOS devices during cleaning processes by2011
Gate dielectrics of different thickness in PMOS and NMOS transistors2011
Method for manufacturing semiconductor device comprising SOI transistors and bul2011
Technique for locally adapting transistor characteristics by using advanced lase2010
Field effect transistor having a doped gate electrode with reduced gate depletio2009
CMOS gate structure comprising predoped semiconductor gate material with improve2008
Semiconductor device having a retrograde dopant profile in a channel region2007
Method of forming a semiconductor structure comprising transistor elements with 2007
Method of forming different silicide portions on different silicon-containing re2007
Semiconductor device having different metal silicide portions and method for fab2007