{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Etching openings of different depths using a single mask layer method and structure", "item": "https://www.patentleaderboard.com/patent/6887785"}]}
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Home › Etching openings of different depths using a single mask layer method and structure

Etching openings of different depths using a single mask layer method and structure

US Patent 6887785 · Granted May 3, 2005

Estimated economic value: $8,163,000 ⓘ

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