Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide

Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide

US Patent 6838393 · Granted Jan 4, 2005

Estimated economic value: $20,484,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned double patterning with spatial atomic layer deposition2025
Integrated low k recovery and ALD metal deposition process for advanced technolo2025
Integrated low k recovery and ALD metal deposition process for advanced technolo2025
Deposition of boron films2025
Methods and apparatus for low temperature silicon nitride films2025
Two-dimension self-aligned scheme with subtractive metal etch2025
Tin oxide and tin carbide materials for semiconductor patterning applications2025
Systems and methods for depositing low-k dielectric films2025
RF pulsing assisted low-k film deposition with high mechanical strength2024
Single precursor low-k film deposition and UV cure for advanced technology node2024
Single precursor low-k film deposition and UV cure for advanced technology node2024
Methods for metal oxide post-treatment2024