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Home › Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer

Method for making a new metal-insulator-metal (MIM) capacitor structure in copper-CMOS circuits using a pad protect layer

US Patent 6812088 · Granted Nov 2, 2004

Estimated economic value: $3,736,000 ⓘ

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