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Home › Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same

Semiconductor device having metal silicide regions of differing thicknesses above the gate electrode and the source/drain regions, and method of making same

US Patent 6306698 · Granted Oct 23, 2001

Estimated economic value: $2,669,000 ⓘ

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