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Home › Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition

Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition

US Patent 6180538 · Granted Jan 30, 2001

Estimated economic value: $6,431,000 ⓘ

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