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Home › Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate

Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate

US Patent 6153474 · Granted Nov 28, 2000

Estimated economic value: $55,341,000 ⓘ

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