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Home › Method for patterning a photoresist material wherein an anti-reflective coating comprising a copolymer of bisphenol A and benzophenone is used

Method for patterning a photoresist material wherein an anti-reflective coating comprising a copolymer of bisphenol A and benzophenone is used

US Patent 5736301 · Granted Apr 7, 1998

Estimated economic value: $12,123,000 ⓘ

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