Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

US Patent 11683994 · Granted Jun 20, 2023

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)2025
Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)2025
Method for forming a perpendicular spin torque oscillator (PSTO) including formi2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Protective passivation layer for magnetic tunnel junctions2025
Protective passivation layer for magnetic tunnel junctions2025