Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)

US Patent 12501836 · Granted Dec 16, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Techniques for high-precision locationing services in a mobile network2025
Dynamic wireless network architecture to serve uplink-centric and downlink-centr2025
Radio frequency allocation among wireless user equipment and integrated access a2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Multilayer structure for reducing film roughness in magnetic devices2025
Etching and encapsulation scheme for magnetic tunnel junction fabrication2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowi2025
Self-aligned encapsulation hard mask to separate physically under-etched MTJ cel2025
Protective passivation layer for magnetic tunnel junctions2025
MTJ device performance by adding stress modulation layer to MTJ device structure2025