Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

US Patent 11075264 · Granted Jul 27, 2021

Estimated economic value: $42,601,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III-nitride high-electron mobility transistors with buried p-type layers a2025
Vertical power devices having mesas and etched trenches therebetween2025
Nondestructive characterization for crystalline wafers2025
Device design for short-circuit protection of transistors2025
Support shield structures for trenched semiconductor devices2025
Edge termination structures for semiconductor devices2025
Multi-scale autoencoders for semiconductor workpiece understanding2025
Vertical power devices fabricated using implanted methods2025
Thin wafer process for improved crystal utilization of wide bandgap devices2025
Power semiconductor devices including a trenched gate and methods of forming suc2025
Trench bottom shielding methods and approaches for trenched semiconductor device2025
Protection structures for semiconductor devices with sensor arrangements2025