Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions

Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions

US Patent 10957799 · Granted Mar 23, 2021

Estimated economic value: $2,115,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Direct backside self-aligned contact2025
Support dielectric fin to prevent gate flop-over in nanosheet transistors2025
Stacked transistors having self aligned backside contact with backside replaceme2025
Self-aligned contact (SAC) in nanosheet transistors2025
Interconnect structure including patterned metal lines2025
Enhanced linerless vias2025
Liner-less via contact2025
Liner-less via contact2025
Gate-all-around field-effect-transistor with wrap-around-channel inner spacer2025
Semiconductor device having hybrid middle of line contacts2025
Semiconductor device having hybrid middle of line contacts2025
Integration of nanosheets with bottom dielectric isolation and ideal diode2025