Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage

Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage

US Patent 10930777 · Granted Feb 23, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Self-aligned wide backside power rail contacts to multiple transistor sources2025
Gate all around device with fully-depleted silicon-on-insulator2025
Gradient doping epitaxy in superjunction to improve breakdown voltage2024
High-voltage devices integrated on semiconductor-on-insulator substrate2024
Asymmetric FET for FDSOI devices2024
Asymmetric FET for FDSOI devices2024
Asymmetric FET for FDSOI devices2024
Methods for forming alignment marks2024
Structure including transistor using buried insulator layer as gate dielectric a2023
Structure including transistor using buried insulator layer as gate dielectric a2023
Graded doping in power devices2023
Stress incorporation in semiconductor devices2023