Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method

STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method

US Patent 10910276 · Granted Feb 2, 2021

Estimated economic value: $194,083,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dispersion gating-based atmospheric composition measurement laser radar2025
Data storage method, data read method, electronic device, and program product2024
Three-stage tubular T-shaped degassing device with microbubble axial flow and sp2024
Separation device with two-stage gas-liquid mixture and conical spiral fields2024
Transistors with separately-formed source and drain2023
Epitaxial semiconductor material regions for transistor devices and methods of f2022
Asymmetric source drain structures2022
Dual trench isolation structures2022
Transistors with an asymmetrical source and drain2022
Epitaxial semiconductor material regions for transistor devices and methods of f2021
Transistors with a hybrid source or drain2021
Preventing dielectric void over trench isolation region2021