Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Inverted staircase contact for density improvement to 3D stacked devices

Inverted staircase contact for density improvement to 3D stacked devices

US Patent 10861870 · Granted Dec 8, 2020

Estimated economic value: $30,873,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Vertically spaced intra-level interconnect line metallization for integrated cir2025
Gate-all-around integrated circuit structures having necked feature2025
Integrated circuit structures having differentiated channel sizing2025
Integrated circuit structures having ultra-high conductivity global routing2025
SRAM with P-type access transistors and complementary field-effect transistor te2025
Fin shaping and integrated circuit structures resulting therefrom2025
Gate-to-gate isolation for stacked transistor architecture via selective dielect2025
Device, method and system to provide a stressed channel of a transistor2025
Asymmetric gate structures and contacts for stacked transistors2025
Gate-all-around integrated circuit structures having high mobility2025
3D 1T1C stacked dram structure and method to fabricate2025