Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions

Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions

US Patent 10818751 · Granted Oct 27, 2020

Estimated economic value: $6,165,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked vertical transport field effect transistor with anchors2025
Reduced capacitance between power via bar and gates2025
Backside self aligned skip via2025
Double patterned microcooler having alternating fin widths2025
Airgap spacer for power via2025
Semiconductor passive device integration for silicon-on-insulator substrate2025
Early backside first power delivery network2025
Source/drain contact at tight cell boundary2025
Light sensor and a method for manufacturing a light sensor2025
Selective area diffusion doping of III-N materials2025
Liner-less via contact2025
BEOL interconnect subtractive etch super via2025