{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of integrated circuit fabrication with dual metal power rail", "item": "https://www.patentleaderboard.com/patent/10580691"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of integrated circuit fabrication with dual metal power rail

Method of integrated circuit fabrication with dual metal power rail

US Patent 10580691 · Granted Mar 3, 2020

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermal etching of ruthenium2025
Metal hard mask integration2025
Metal hard mask integration2025
Technologies for fabricating a vertical DRAM structure2025
Method of conductive material deposition2025
Method of conductive material deposition2025
Tapered device for lateral gate all around devices2025
Selective film formation using a self-assembled monolayer2025
Conductive superlattice structures and methods of forming the same2025
Replacement buried power rail in backside power delivery2025
Visual and audio multimodal searching system2025
Variable hardness amorphous carbon mask2025