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Home › Semiconductor devices employing field effect transistors (FETs) with multiple channel structures without shallow trench isolation (STI) void-induced electrical shorts

Semiconductor devices employing field effect transistors (FETs) with multiple channel structures without shallow trench isolation (STI) void-induced electrical shorts

US Patent 10141305 · Granted Nov 27, 2018

Estimated economic value: $6,998,000 ⓘ

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