Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6372591 | Fabrication method of semiconductor device using ion implantation | Akira Mineji, Shuichi Saito | 2002-04-16 |
| 6258635 | Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk | Kousuke Miyoshi | 2001-07-10 |
| 6190976 | Fabrication method of semiconductor device using selective epitaxial growth | Tomoko Yasunaga | 2001-02-20 |
| 6017823 | Method of forming a MOS field effect transistor with improved gate side wall insulation films | Tomoko Yasunaga, Akira Mineji | 2000-01-25 |
| 6010914 | Method for manufacturing a semiconductor device | — | 2000-01-04 |
| 5972785 | Method for manufacturing a semiconductor device having a refractory metal silicide layer | Hiroshi Kitajima | 1999-10-26 |
| 5951774 | Cold-wall operated vapor-phase growth system | Tohru Aoyama, Tatsuya Suzuki | 1999-09-14 |
| 5894037 | Silicon semiconductor substrate and method of fabricating the same | Hiroaki Kikuchi | 1999-04-13 |
| 5858853 | Method for forming capacitor electrode having jagged surface | Tatsuya Suzuki, Hideo Kawano, Keiji Shiotani, Masao Mikami | 1999-01-12 |
| 5821158 | Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature | — | 1998-10-13 |
| 5798544 | Semiconductor memory device having trench isolation regions and bit lines formed thereover | Shuichi Ohya, Masato Sakao, Yoshihiro Takaishi, Kiyonori Kajiyana, Takeshi Akimoto +1 more | 1998-08-25 |
| 5783257 | Method for forming doped polysilicon films | Kazuhide Hasebe, Nobuaki Shigematsu | 1998-07-21 |
| 5773357 | Method for producing silicon film to bury contact hole | — | 1998-06-30 |
| 5543347 | Method of forming silicon film having jagged surface | Hideo Kawano, Keiji Shiotani, Masao Mikami, Tatsuya Suzuki | 1996-08-06 |
| 5470780 | Method of fabricating poly-silicon resistor | — | 1995-11-28 |
| 4992301 | Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness | Fumitoshi Toyokawa, Masao Mikami | 1991-02-12 |