SS

Seiichi Shishiguchi

NE Nec: 16 patents #699 of 14,502Top 5%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
Overall (All Time): #302,523 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6372591 Fabrication method of semiconductor device using ion implantation Akira Mineji, Shuichi Saito 2002-04-16
6258635 Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk Kousuke Miyoshi 2001-07-10
6190976 Fabrication method of semiconductor device using selective epitaxial growth Tomoko Yasunaga 2001-02-20
6017823 Method of forming a MOS field effect transistor with improved gate side wall insulation films Tomoko Yasunaga, Akira Mineji 2000-01-25
6010914 Method for manufacturing a semiconductor device 2000-01-04
5972785 Method for manufacturing a semiconductor device having a refractory metal silicide layer Hiroshi Kitajima 1999-10-26
5951774 Cold-wall operated vapor-phase growth system Tohru Aoyama, Tatsuya Suzuki 1999-09-14
5894037 Silicon semiconductor substrate and method of fabricating the same Hiroaki Kikuchi 1999-04-13
5858853 Method for forming capacitor electrode having jagged surface Tatsuya Suzuki, Hideo Kawano, Keiji Shiotani, Masao Mikami 1999-01-12
5821158 Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature 1998-10-13
5798544 Semiconductor memory device having trench isolation regions and bit lines formed thereover Shuichi Ohya, Masato Sakao, Yoshihiro Takaishi, Kiyonori Kajiyana, Takeshi Akimoto +1 more 1998-08-25
5783257 Method for forming doped polysilicon films Kazuhide Hasebe, Nobuaki Shigematsu 1998-07-21
5773357 Method for producing silicon film to bury contact hole 1998-06-30
5543347 Method of forming silicon film having jagged surface Hideo Kawano, Keiji Shiotani, Masao Mikami, Tatsuya Suzuki 1996-08-06
5470780 Method of fabricating poly-silicon resistor 1995-11-28
4992301 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness Fumitoshi Toyokawa, Masao Mikami 1991-02-12