JP

James R. Pfiester

Motorola: 67 patents #18 of 12,470Top 1%
AP Avago Technologies Enterprise Ip (Singapore) Pte.: 1 patents #14 of 47Top 30%
AP Avago Technologies General Ip Pte.: 1 patents #18 of 125Top 15%
🗺 Texas: #965 of 125,132 inventorsTop 1%
Overall (All Time): #30,365 of 4,157,543Top 1%
69
Patents All Time

Issued Patents All Time

Showing 51–69 of 69 patents

Patent #TitleCo-InventorsDate
4942137 Self-aligned trench with selective trench fill Richard D. Sivan, John E. Leiss 1990-07-17
4928156 N-channel MOS transistors having source/drain regions with germanium John R. Alvis, Orin W. Holland 1990-05-22
4918510 Compact CMOS device structure 1990-04-17
4876213 Salicided source/drain structure 1989-10-24
4852062 EPROM device using asymmetrical transistor characteristics Frank K. Baker, Jr., Charles Frederick Hart 1989-07-25
4847213 Process for providing isolation between CMOS devices 1989-07-11
4837173 N-channel MOS transistors having source/drain regions with germanium John R. Alvis, Orin W. Holland 1989-06-06
4835112 CMOS salicide process using germanium implantation John R. Yeargain 1989-05-30
4835589 Ram cell having trench sidewall load 1989-05-30
4812418 Micron and submicron patterning without using a lithographic mask having submicron dimensions Louis C. Parrillo, J. William Dockrey 1989-03-14
4811066 Compact multi-state ROM cell Frank K. Baker, Jr. 1989-03-07
4786611 Adjusting threshold voltages by diffusion through refractory metal silicides 1988-11-22
4761385 Forming a trench capacitor 1988-08-02
4745079 Method for fabricating MOS transistors having gates with different work functions 1988-05-17
4743563 Process of controlling surface doping John R. Alvis, Orin W. Holland 1988-05-10
4728619 Field implant process for CMOS using germanium John R. Alvis, Orin W. Holland 1988-03-01
4714519 Method for fabricating MOS transistors having gates with different work functions 1987-12-22
4318014 Selective precharge circuit for read-only-memory Doyle V. McAlister 1982-03-02
4292547 IGFET Decode circuit using series-coupled transistors Doyle V. McAlister 1981-09-29