Issued Patents All Time
Showing 26–50 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9147734 | High quality GaN high-voltage HFETs on silicon | John Paul Edwards, Linlin Liu | 2015-09-29 |
| 9111753 | Backside stress compensation method for making gallium nitride or other nitride-based semiconductor devices | — | 2015-08-18 |
| 9082817 | Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates | Sandeep R. Bahl | 2015-07-14 |
| 9064928 | Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates | Sandeep R. Bahl | 2015-06-23 |
| 8940593 | Enhancement-mode GaN MOSFET with low leakage current and improved reliability | — | 2015-01-27 |
| 8940620 | Composite wafer for fabrication of semiconductor devices | Alexei Koudymov, Kierthi Swaminathan | 2015-01-27 |
| 8928037 | Heterostructure power transistor with AlSiN passivation layer | Michael Murphy, John Paul Edwards | 2015-01-06 |
| 8802516 | Normally-off gallium nitride-based semiconductor devices | — | 2014-08-12 |
| 8785305 | Backside stress compensation for gallium nitride or other nitride-based semiconductor devices | — | 2014-07-22 |
| 8723296 | Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates | — | 2014-05-13 |
| 8703561 | High quality GaN high-voltage HFETs on silicon | John Paul Edwards, Linlin Liu | 2014-04-22 |
| 8633094 | GaN high voltage HFET with passivation plus gate dielectric multilayer structure | Linlin Liu, John Paul Edwards | 2014-01-21 |
| 8624260 | Enhancement-mode GaN MOSFET with low leakage current and improved reliability | — | 2014-01-07 |
| 8592292 | Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates | Sandeep R. Bahl | 2013-11-26 |
| 8591427 | Heart monitoring system or other system for measuring magnetic fields | Lawrence H. Zuckerman, Michael X. Maida, Dennis M. Monticelli, James B. Wieser, Paul Mawson +1 more | 2013-11-26 |
| 8581579 | Magneto electric sensor with injected up-conversion or down-conversion | Lawrence H. Zuckerman, Michael X. Maida, Dennis M. Monticelli, James B. Wieser | 2013-11-12 |
| 8507947 | High quality GaN high-voltage HFETS on silicon | John Paul Edwards, Linlin Liu | 2013-08-13 |
| 8377788 | SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor | Wibo Van Noort, Andre P. Labonte, Donald Robertson Getchell | 2013-02-19 |
| 8148799 | Self-aligned bipolar transistor structure | Monir H. El-Diwany, Alexei Sadovnikov | 2012-04-03 |
| 7892915 | High performance SiGe:C HBT with phosphorous atomic layer doping | Craig Printy, Thanas Budri | 2011-02-22 |
| 7846806 | System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture | Mingwei Xu | 2010-12-07 |
| 7838375 | System and method for providing a polyemit module for a self aligned heterojunction bipolar transistor architecture | Mingwei Xu | 2010-11-23 |
| 7829429 | Semiconductor device having localized insulated block in bulk substrate and related method | Craig Printy, Andre P. Labonte | 2010-11-09 |
| 7781295 | System and method for providing a single deposition emitter/base in a bipolar junction transistor | Craig Printy, Steven J. Adler, Andre P. Labonte | 2010-08-24 |
| 7687887 | Method of forming a self-aligned bipolar transistor structure using a selectively grown emitter | Monir H. El-Diwany, Alexei Sadovnikov | 2010-03-30 |