Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11776815 | Asymmetrical plug technique for GaN devices | Alexey Kudymov, Jamal Ramdani | 2023-10-03 |
| 11721753 | Method of fabricating a transistor | Alexey Kudymov, Xiaohui Wang, Jamal Ramdani | 2023-08-08 |
| 11373873 | Asymmetrical plug technique for GaN devices | Alexey Kudymov, Jamal Ramdani | 2022-06-28 |
| 11075294 | Protective insulator for HFET devices | Alexey Kudymov, Xiaohui Wang, Jamal Ramdani | 2021-07-27 |
| 10665463 | Asymmetrical plug technique for GaN devices | Alexey Kudymov, Jamal Ramdani | 2020-05-26 |
| 10629719 | Protective insulator for HFET devices | Alexey Kudymov, Xiaohui Wang, Jamal Ramdani | 2020-04-21 |
| 10520543 | Test structure and method for judging de-embedding accuracy of RF devices by using an introduced device | — | 2019-12-31 |
| 10204791 | Contact plug for high-voltage devices | Alexey Kudymov, Jamal Ramdani | 2019-02-12 |
| 10121885 | Protective insulator for HFET devices | Alexey Kudymov, Xiaohui Wang, Jamal Ramdani | 2018-11-06 |
| 9722063 | Protective insulator for HFET devices | Alexey Kudymov, Xiaohui Wang, Jamal Ramdani | 2017-08-01 |
| 9525055 | High-electron-mobility transistors | Alexey Kudymov, Jamal Ramdani | 2016-12-20 |
| 9437688 | High-quality GaN high-voltage HFETs on silicon | Jamal Ramdani, John Paul Edwards | 2016-09-06 |
| 9343541 | Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure | Jamal Ramdani, John Paul Edwards | 2016-05-17 |
| 9306014 | High-electron-mobility transistors | Alexey Kudymov, Jamal Ramdani | 2016-04-05 |
| 9147734 | High quality GaN high-voltage HFETs on silicon | Jamal Ramdani, John Paul Edwards | 2015-09-29 |
| 8729565 | Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes | Milan Pophristic, Boris Peres | 2014-05-20 |
| 8703561 | High quality GaN high-voltage HFETs on silicon | Jamal Ramdani, John Paul Edwards | 2014-04-22 |
| 8633094 | GaN high voltage HFET with passivation plus gate dielectric multilayer structure | Jamal Ramdani, John Paul Edwards | 2014-01-21 |
| 8530903 | Layout design for a high power, GaN-based FET having interdigitated electrodes | Milan Pophristic, Boris Peres | 2013-09-10 |
| 8507947 | High quality GaN high-voltage HFETS on silicon | Jamal Ramdani, John Paul Edwards | 2013-08-13 |
| 8319256 | Layout design for a high power, GaN-based FET | Milan Pophristic, Boris Peres | 2012-11-27 |
| 8022495 | PIN diode structure with zinc diffusion region | Xiang Gao, Alex Ceruzzi, Stephen Schwed | 2011-09-20 |
| 7863172 | Gallium nitride semiconductor device | TingGang Zhu, Bryan Shelton, Marek Pabisz, Mark Gottfried, Milan Pophristic +2 more | 2011-01-04 |
| 7538403 | PIN diode structure with zinc diffusion region | Xiang Gao, Alex Ceruzzi, Stephen Schwed | 2009-05-26 |
| 7518240 | Deposition pattern for eliminating backside metal peeling during die separation in semiconductor device fabrication | Douglas A. Collins, Elaine Taylor | 2009-04-14 |