| 11776815 |
Asymmetrical plug technique for GaN devices |
Alexey Kudymov, Jamal Ramdani |
2023-10-03 |
$28,230,000 |
| 11721753 |
Method of fabricating a transistor |
Alexey Kudymov, Xiaohui Wang, Jamal Ramdani |
2023-08-08 |
$33,263,000 |
| 11373873 |
Asymmetrical plug technique for GaN devices |
Alexey Kudymov, Jamal Ramdani |
2022-06-28 |
$35,184,000 |
| 11075294 |
Protective insulator for HFET devices |
Alexey Kudymov, Xiaohui Wang, Jamal Ramdani |
2021-07-27 |
$19,219,000 |
| 10665463 |
Asymmetrical plug technique for GaN devices |
Alexey Kudymov, Jamal Ramdani |
2020-05-26 |
$26,320,000 |
| 10629719 |
Protective insulator for HFET devices |
Alexey Kudymov, Xiaohui Wang, Jamal Ramdani |
2020-04-21 |
$21,911,000 |
| 10520543 |
Test structure and method for judging de-embedding accuracy of RF devices by using an introduced device |
— |
2019-12-31 |
|
| 10204791 |
Contact plug for high-voltage devices |
Alexey Kudymov, Jamal Ramdani |
2019-02-12 |
$6,569,000 |
| 10121885 |
Protective insulator for HFET devices |
Alexey Kudymov, Xiaohui Wang, Jamal Ramdani |
2018-11-06 |
$10,132,000 |
| 9722063 |
Protective insulator for HFET devices |
Alexey Kudymov, Xiaohui Wang, Jamal Ramdani |
2017-08-01 |
$4,494,000 |
| 9525055 |
High-electron-mobility transistors |
Alexey Kudymov, Jamal Ramdani |
2016-12-20 |
$5,478,000 |
| 9437688 |
High-quality GaN high-voltage HFETs on silicon |
Jamal Ramdani, John Paul Edwards |
2016-09-06 |
$5,050,000 |
| 9343541 |
Method of fabricating GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
Jamal Ramdani, John Paul Edwards |
2016-05-17 |
$2,782,000 |
| 9306014 |
High-electron-mobility transistors |
Alexey Kudymov, Jamal Ramdani |
2016-04-05 |
$7,998,000 |
| 9147734 |
High quality GaN high-voltage HFETs on silicon |
Jamal Ramdani, John Paul Edwards |
2015-09-29 |
$2,446,000 |
| 8729565 |
Layout design for a high power, GaN-based FET having interdigitated gate, source and drain electrodes |
Milan Pophristic, Boris Peres |
2014-05-20 |
$4,031,000 |
| 8703561 |
High quality GaN high-voltage HFETs on silicon |
Jamal Ramdani, John Paul Edwards |
2014-04-22 |
$6,440,000 |
| 8633094 |
GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
Jamal Ramdani, John Paul Edwards |
2014-01-21 |
$4,713,000 |
| 8530903 |
Layout design for a high power, GaN-based FET having interdigitated electrodes |
Milan Pophristic, Boris Peres |
2013-09-10 |
$3,974,000 |
| 8507947 |
High quality GaN high-voltage HFETS on silicon |
Jamal Ramdani, John Paul Edwards |
2013-08-13 |
$3,697,000 |
| 8319256 |
Layout design for a high power, GaN-based FET |
Milan Pophristic, Boris Peres |
2012-11-27 |
$6,582,000 |
| 8022495 |
PIN diode structure with zinc diffusion region |
Xiang Gao, Alex Ceruzzi, Stephen Schwed |
2011-09-20 |
$1,240,000 |
| 7863172 |
Gallium nitride semiconductor device |
TingGang Zhu, Bryan Shelton, Marek Pabisz, Mark Gottfried, Milan Pophristic +2 more |
2011-01-04 |
$8,615,000 |
| 7538403 |
PIN diode structure with zinc diffusion region |
Xiang Gao, Alex Ceruzzi, Stephen Schwed |
2009-05-26 |
$3,989,000 |
| 7518240 |
Deposition pattern for eliminating backside metal peeling during die separation in semiconductor device fabrication |
Douglas A. Collins, Elaine Taylor |
2009-04-14 |
$2,159,000 |