Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GaN high voltage HFET with passivation plus gate dielectric multilayer structure

GaN high voltage HFET with passivation plus gate dielectric multilayer structure

US Patent 8633094 · Granted Jan 21, 2014

Estimated economic value: $4,713,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Asymmetrical plug technique for GaN devices2023
Asymmetrical plug technique for GaN devices2023
Method of fabricating a transistor2023
Method of fabricating a transistor2023
Asymmetrical plug technique for GaN devices2022
Asymmetrical plug technique for GaN devices2022
Gate stack for heterostructure device2021
Integrated resistor for semiconductor device2021
Protective insulator for HFET devices2021
Protective insulator for HFET devices2021
Asymmetrical plug technique for GaN devices2020
Asymmetrical plug technique for GaN devices2020