EC

Eugene Chen

Motorola: 39 patents #73 of 12,470Top 1%
GR Grandis: 22 patents #3 of 36Top 9%
RT Renesas Technology: 5 patents #592 of 3,337Top 20%
Samsung: 4 patents #25,854 of 75,807Top 35%
SS Silicon Magnetic Systems: 3 patents #6 of 20Top 30%
FS Freeescale Semiconductor: 3 patents #982 of 3,767Top 30%
RE Renesas Electronics: 1 patents #2,739 of 4,529Top 65%
Cypress Semiconductor: 1 patents #1,072 of 1,852Top 60%
Adobe: 1 patents #2,549 of 4,589Top 60%
IN Intel: 1 patents #18,218 of 30,777Top 60%
Overall (All Time): #25,695 of 4,157,543Top 1%
75
Patents All Time

Issued Patents All Time

Showing 25 most recent of 75 patents

Patent #TitleCo-InventorsDate
11227226 Utilizing joint-probabilistic ensemble forecasting to generate improved digital predictions Zhenyu Yan, Xiaojing Dong 2022-01-18
9799382 Method for providing a magnetic junction on a substrate and usable in a magnetic device Dustin William Erickson, Xueti Tang, Jangeun Lee 2017-10-24
9029965 Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer Dmytro Apalkov 2015-05-12
8890569 Method and system for providing a nonvolatile logic array Dmytro Apalkov, Kaveh M. Milaninia 2014-11-18
8779538 Magnetic tunneling junction seed, capping, and spacer layer materials Xueti Tang 2014-07-15
8546151 Method for manufacturing magnetic storage device and magnetic storage device Haruo Furuta, Shuichi Ueno, Ryoji Matsuda, Tatsuya Fukumura, Takeharu Kuroiwa +2 more 2013-10-01
8546896 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements Daniel K. Lottis, Xueti Tang, Steven M. Watts 2013-10-01
8456898 Magnetic element having perpendicular anisotropy with enhanced efficiency Shengyuan Wang 2013-06-04
8406045 Three terminal magnetic element Dmytro Apalkov 2013-03-26
8072800 Magnetic element having perpendicular anisotropy with enhanced efficiency Shengyuan Wang 2011-12-06
7973349 Magnetic device having multilayered free ferromagnetic layer Yiming Huai, Zhitao Diao 2011-07-05
7916433 Magnetic element utilizing free layer engineering Yiming Huai, Zhitao Diao 2011-03-29
7859034 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer Yiming Huai, Zhitao Diao 2010-12-28
7800942 Method and system for providing a magnetic element and magnetic memory being unidirectional writing enabled Dmytro Apalkov 2010-09-21
7791931 Current driven memory cells having enhanced current and enhanced current symmetry Yiming Huai 2010-09-07
7777261 Magnetic device having stabilized free ferromagnetic layer Yiming Huai, Zhitao Diao 2010-08-17
7760474 Magnetic element utilizing free layer engineering Yiming Huai, Zhitao Diao 2010-07-20
7742328 Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors Yiming Huai, Alexander A. G. Driskill-Smith 2010-06-22
7663848 Magnetic memories utilizing a magnetic element having an engineered free layer Yiming Huai, Zhitao Diao 2010-02-16
7623369 Method and system for providing a magnetic memory structure utilizing spin transfer Xiao Luo, Lien-Chang Wang, Yiming Huai 2009-11-24
7515457 Current driven memory cells having enhanced current and enhanced current symmetry Yiming Huai 2009-04-07
7489541 Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements Mahendra Pakala, Yiming Huai 2009-02-10
7430135 Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density Yiming Huai, Zhitao Diao, Alex Panchula, Lien-Chang Wang 2008-09-30
7379327 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins Yiming Huai, Alex Panchula, Lien-Chang Wang, Xiao Luo 2008-05-27
7345912 Method and system for providing a magnetic memory structure utilizing spin transfer Xiao Luo, Lien-Chang Wang, Yiming Huai 2008-03-18