SW

Steven M. Watts

Samsung: 6 patents #19,812 of 75,807Top 30%
GR Grandis: 5 patents #12 of 36Top 35%
SM Spin Memory: 1 patents #37 of 49Top 80%
Overall (All Time): #413,365 of 4,157,543Top 10%
12
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching Georg Wolf, Kadriye Deniz Bozdag, Bartlomiej Adam Kardasz, Mustafa Pinarbasi 2020-03-03
10446209 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Zhitao Diao, Xueti Tang, Kiseok Moon, Mohamad Towfik Krounbi 2019-10-15
9490421 Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions Dmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy, Vladimir Nikitin 2016-11-08
9412787 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Zhitao Diao, Xueti Tang 2016-08-09
8913350 Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Zhitao Diao, Xueti Tang 2014-12-16
8796796 Method and system for providing magnetic junctions having improved polarization enhancement and reference layers Kiseok Moon 2014-08-05
8710602 Method and system for providing magnetic junctions having improved characteristics Xueti Tang, Dmytro Apalkov, Kiseok Moon, Vladimir Nikitin 2014-04-29
8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Xueti Tang, Vladimir Nikitin, Dmytro Apalkov, Kiseok Moon 2014-04-22
8546896 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements Daniel K. Lottis, Eugene Chen, Xueti Tang 2013-10-01
8456882 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Dmytro Apalkov, Vladimir Nikitin, David Druist 2013-06-04
8422285 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Alexander A. G. Driskill-Smith, David Druist 2013-04-16
8159866 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories Dmytro Apalkov, Vladimir Nikitin, David Druist 2012-04-17