Issued Patents All Time
Showing 1–25 of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12075706 | Precessional spin current structure with non-magnetic insertion layer for MRAM | Mustafa Pinarbasi | 2024-08-27 |
| 12069957 | Method for manufacturing a magnetic random-access memory device using post pillar formation annealing | Jorge Vasquez, Jacob Anthony Hernandez, Thomas Dudley Boone, Jr., Georg Wolf, Mustafa Pinarbasi | 2024-08-20 |
| 11925125 | High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices | Jorge Vasquez, Mustafa Pinarbasi, Georg Wolf | 2024-03-05 |
| 11545620 | Methods of manufacture precessional spin current magnetic tunnel junction devices | Jorge Vasquez, Mustafa Pinarbasi | 2023-01-03 |
| 11355699 | Precessional spin current structure for MRAM | Mustafa Pinarbasi | 2022-06-07 |
| 11329099 | Magnetic memory chip having nvm class and SRAM class MRAM elements on the same chip | Mustafa Pinarbasi, Thomas Dudley Boone, Jr. | 2022-05-10 |
| 11329217 | Method for manufacturing a magnetic random-access memory device using post pillar formation annealing | Jorge Vasquez, Jacob Anthony Hernandez, Thomas Dudley Boone, Jr., Georg Wolf, Mustafa Pinarbasi | 2022-05-10 |
| 11283010 | Precessional spin current structure for magnetic random access memory with novel capping materials | Jorge Vasquez, Cheng Wei Chiu, Mustafa Pinarbasi | 2022-03-22 |
| 11271149 | Precessional spin current structure with nonmagnetic insertion layer for MRAM | Mustafa Pinarbasi | 2022-03-08 |
| 11264557 | High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices | Jorge Vasquez, Mustafa Pinarbasi, Georg Wolf | 2022-03-01 |
| 10916696 | Method for manufacturing magnetic memory element with post pillar formation annealing | Mustafa Pinarbasi, Pradeep Manandhar, Jorge Vasquez, Thomas Dudley Boone, Jr. | 2021-02-09 |
| 10879454 | Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application | Cheng Wei Chiu, Jorge Vasquez, Mustafa Pinarbasi | 2020-12-29 |
| 10840436 | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture | Jorge Vasquez, Mustafa Pinarbasi | 2020-11-17 |
| 10784439 | Precessional spin current magnetic tunnel junction devices and methods of manufacture | Jorge Vasquez, Mustafa Pinarbasi | 2020-09-22 |
| 10734574 | Method of manufacturing high annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory | Mustafa Pinarbasi, Jacob Anthony Hernandez | 2020-08-04 |
| 10672976 | Precessional spin current structure with high in-plane magnetization for MRAM | Mustafa Pinarbasi | 2020-06-02 |
| 10665777 | Precessional spin current structure with non-magnetic insertion layer for MRAM | Mustafa Pinarbasi | 2020-05-26 |
| 10651370 | Perpendicular magnetic tunnel junction retention and endurance improvement | Mustafa Pinarbasi, Jorge Vasquez, Thomas Dudley Boone, Jr. | 2020-05-12 |
| 10615335 | Spin transfer torque structure for MRAM devices having a spin current injection capping layer | Mustafa Pinarbasi | 2020-04-07 |
| 10580827 | Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching | Steven M. Watts, Georg Wolf, Kadriye Deniz Bozdag, Mustafa Pinarbasi | 2020-03-03 |
| 10553787 | Precessional spin current structure for MRAM | Mustafa Pinarbasi, Michail Tzoufras | 2020-02-04 |
| 10468590 | High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory | Mustafa Pinarbasi, Jacob Anthony Hernandez | 2019-11-05 |
| 10468588 | Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer | Manfred Ernst Schabes, Mustafa Pinarbasi | 2019-11-05 |
| 10461242 | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications | Jorge Vasquez, Mustafa Pinarbasi, Georg Wolf | 2019-10-29 |
| 10424357 | Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer | Michail Tzoufras, Elizabeth Dobisz, Marcin Gajek, Davide Guarisco | 2019-09-24 |