Issued Patents All Time
Showing 51–75 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6083764 | Method of fabricating an MTJ with low areal resistance | — | 2000-07-04 |
| 6016269 | Quantum random address memory with magnetic readout and/or nano-memory elements | William M. Peterson | 2000-01-18 |
| 5966323 | Low switching field magnetoresistive tunneling junction for high density arrays | Mark Durlam, Saied N. Tehrani | 1999-10-12 |
| 5959880 | Low aspect ratio magnetoresistive tunneling junction | Jing Shi, Theodore Zhu, Saied N. Tehrani, Mark Durlam | 1999-09-28 |
| 5953248 | Low switching field magnetic tunneling junction for high density arrays | Saied N. Tehrani | 1999-09-14 |
| 5940319 | Magnetic random access memory and fabricating method thereof | Mark Durlam, Gloria Kerszykowski, Jon Slaughter, Theodore Zhu, Saied N. Tehrani +1 more | 1999-08-17 |
| 5920500 | Magnetic random access memory having stacked memory cells and fabrication method therefor | Saied N. Tehrani, Xiaodong Zhu, Herbert Goronkin | 1999-07-06 |
| 5917749 | MRAM cell requiring low switching field | Saied N. Tehrani | 1999-06-29 |
| 5902690 | Stray magnetic shielding for a non-volatile MRAM | Clarence J. Tracy, Mark Durlam, Theodore Zhu, Saied N. Tehrani | 1999-05-11 |
| 5898612 | Magnetic memory cell with increased GMR ratio | Jing Shi | 1999-04-27 |
| 5861328 | Method of fabricating GMR devices | Saied N. Tehrani, Mark Durlam, Xiaodong Zhu, Clarence J. Tracy | 1999-01-19 |
| 5838607 | Spin polarized apparatus | Xiaodong Zhu, Saied N. Tehrani, Mark Durlam | 1998-11-17 |
| 5831920 | GMR device having a sense amplifier protected by a circuit for dissipating electric charges | Saied N. Tehrani, Mark Durlam, Peter K. Naji | 1998-11-03 |
| 5828598 | MRAM with high GMR ratio | Saied N. Tehrani, David Cronk | 1998-10-27 |
| 5818316 | Nonvolatile programmable switch | Jun Shen, Saied N. Tehrani | 1998-10-06 |
| 5774394 | Magnetic memory cell with increased GMR ratio | Saied N. Tehrani, Steven A. Voight | 1998-06-30 |
| 5768183 | Multi-layer magnetic memory cells with improved switching characteristics | Xiaodong Zhu, Saied N. Tehrani, Mark Durlam | 1998-06-16 |
| 5748524 | MRAM with pinned ends | Saied N. Tehrani, Ronald N. Legge, Xiaodong Zhu | 1998-05-05 |
| 5745408 | Multi-layer magnetic memory cell with low switching current | Saied N. Tehrani, Herbert Goronkin | 1998-04-28 |
| 5734606 | Multi-piece cell and a MRAM array including the cell | Saied N. Tehrani, Ronald N. Legge, Xiaodong Zhu, Mark Durlam | 1998-03-31 |
| 5732016 | Memory cell structure in a magnetic random access memory and a method for fabricating thereof | Saied N. Tehrani, Herbert Goronkin | 1998-03-24 |
| 5702831 | Ferromagnetic GMR material | Saied N. Tehrani | 1997-12-30 |
| 5703805 | Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses | Saied N. Tehrani, Mark Durlam, Xiaodong Zhu | 1997-12-30 |
| 5699293 | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device | Saied N. Tehrani, Xiaodong Zhu, Mark Durlam | 1997-12-16 |
| 5659499 | Magnetic memory and method therefor | Saied N. Tehrani, Mark Durlam, Xiaodong Zhu | 1997-08-19 |