DE

Dustin William Erickson

Samsung: 11 patents #12,136 of 75,807Top 20%
HB Hgst Netherlands, B.V.: 2 patents #341 of 972Top 40%
W( Western Digital (Fremont): 2 patents #232 of 473Top 50%
WT Western Digital Technologies: 1 patents #1,787 of 3,180Top 60%
🗺 California: #37,514 of 386,348 inventorsTop 10%
Overall (All Time): #296,185 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
10297278 Material for use in a TMR read gap without adversely affecting the TMR effect Satoru Araki, Diane L. Brown, Hiroaki Chihaya, David J. Seagle 2019-05-21
10164175 Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions Mohamad Towfik Krounbi, Xueti Tang, Donkoun Lee 2018-12-25
9876164 Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications Xueti Tang, Mohamad Towfik Krounbi, Donkoun Lee, Gen Feng 2018-01-23
9825220 B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM Dmytro Apalkov, Xueti Tang, Vladimir Nikitin, Roman Chepulskyy 2017-11-21
9806253 Method for providing a high perpendicular magnetic anisotropy layer in a magnetic junction usable in spin transfer torque magnetic devices using multiple anneals Dmytro Apalkov, Vladimir Nikitin 2017-10-31
9799382 Method for providing a magnetic junction on a substrate and usable in a magnetic device Xueti Tang, Jangeun Lee, Eugene Chen 2017-10-24
9735350 Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applications Robert Beach, Roman Chepulskyy, Vladimir Nikitin 2017-08-15
9666794 Multi-stage element removal using absorption layers Volodymyr Voznyuk 2017-05-30
9559296 Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layer Xueti Tang, Jangeun Lee 2017-01-31
9559143 Method and system for providing magnetic junctions including free layers that are cobalt-free Xueti Tang, Jang-Eun Lee, Gen Feng 2017-01-31
9472750 Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications Xueti Tang, Jang-Eun Lee 2016-10-18
9129690 Method and system for providing magnetic junctions having improved characteristics Chang-Man Park, Mohamad Towfik Krounbi 2015-09-08
8867177 Magnetic sensor having improved resistance to thermal stress induced instability Satoru Araki, Hardayal Singh Gill, Hiroaki Chihaya, Haiwen Xi, Chang-Man Park 2014-10-21
8804287 Material for use in a TMR read gap without adversely affecting the TMR effect Satoru Araki, Diane L. Brown, Hiroaki Chihaya, David J. Seagle 2014-08-12
7684160 Magnetoresistive structure having a novel specular and barrier layer combination Chang-Man Park, Shin Funada, Lena Miloslavsky 2010-03-23
7417832 Magnetoresistive structure having a novel specular and filter layer combination Chang-Man Park, Shin Funada, Lena Miloslavsky 2008-08-26