KS

Kuo-Tung Sung

MV Mosel Vitelic: 23 patents #2 of 482Top 1%
TSMC: 3 patents #5,465 of 12,232Top 45%
UC United Integrated Circuits: 3 patents #3 of 49Top 7%
MC Macronix International Co.: 1 patents #718 of 1,241Top 60%
UM United Microelectronics: 1 patents #2,686 of 4,560Top 60%
📍 Zhudong, TW: #1 of 60 inventorsTop 2%
Overall (All Time): #98,843 of 4,157,543Top 3%
35
Patents All Time

Issued Patents All Time

Showing 1–25 of 35 patents

Patent #TitleCo-InventorsDate
9607121 Cascode CMOS structure Fu-Lung Hsueh, Chih-Ping Chao, Chewn-Pu Jou, Yung-Chow Peng, Harry-Hak-Lay Chuang 2017-03-28
8847321 Cascode CMOS structure Fu-Lung Hsueh, Chih-Ping Chao, Chewn-Pu Jou, Yung-Chow Peng, Harry-Hak-Lay Chuang 2014-09-30
8217469 Contact implement structure for high density design Yung-Chin Hou, Yuh-Jier Mii, Li-Chun Tien 2012-07-10
6469341 Method and device for producing undercut gate for flash memory Ray C. Lee 2002-10-22
6440796 Poly spacer split gate cell with extremely small cell size 2002-08-27
6414350 EPROM cell having a gate structure with dual side-wall spacers of differential composition Tsong-Minn Hsieh 2002-07-02
6365455 Flash memory process using polysilicon spacers Wen-Doe Su, Thomas Chang, Mao-Song Tseng, Shih-Chi Lai, Kun-Yu Sung +1 more 2002-04-02
6352897 Method of improving edge recess problem of shallow trench isolation 2002-03-05
6331721 Memory cell with built in erasure feature Wen-Ting Chu, Huoy-Jong Wu 2001-12-18
6265754 Covered slit isolation between integrated circuit devices 2001-07-24
6261903 Floating gate method and device A. J. Chang 2001-07-17
6255205 High density programmable read-only memory employing double-wall spacers 2001-07-03
6242774 Poly spacer split gate cell with extremely small cell size 2001-06-05
6238977 Method for fabricating a nonvolatile memory including implanting the source region, forming the first spacers, implanting the drain regions, forming the second spacers, and forming a source line on the source and second spacers 2001-05-29
6194269 Method to improve cell performance in split gate flash EEPROM Huoy-Jong Wu 2001-02-27
6194272 Split gate flash cell with extremely small cell size 2001-02-27
6184093 Method of implementing differential gate oxide thickness for flash EEPROM 2001-02-06
6171927 Device with differential field isolation thicknesses and related methods Yuru Chu 2001-01-09
6165843 Covered slit isolation between integrated circuit devices 2000-12-26
6136653 Method and device for producing undercut gate for flash memory Ray C. Lee 2000-10-24
6136647 Method of forming interpoly dielectric and gate oxide in a memory cell 2000-10-24
6121116 Flash memory device isolation method and structure 2000-09-19
6110796 Method of improving junction leakage problem of shallow trench isolation by covering said STI with an insulating layer during salicide process 2000-08-29
6093627 Self-aligned contact process using silicon spacers 2000-07-25
6083792 Manufacturing process of a split gate flash memory unit 2000-07-04