Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5502324 | Composite wiring layer | Atsushi Hachisuka | 1996-03-26 |
| 5428239 | Semiconductor device having retrograde well and diffusion-type well | Tomonori Okudaira, Hideaki Arima | 1995-06-27 |
| 5404042 | Semiconductor memory device having a plurality of well regions of different conductivities | Tomonori Okudaira, Hideaki Arima | 1995-04-04 |
| 5393688 | Method of manufacturing a stacked capacitor DRAM | Kaoru Motonami | 1995-02-28 |
| 5300444 | Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film | Atsushi Hachisuka, Masao Nagatomo, Ikuo Ogoh, Hideki Genjou, Takayuki Matsukawa | 1994-04-05 |
| 5281838 | Semiconductor device having contact between wiring layer and impurity region | Atsushi Hachisuka | 1994-01-25 |
| 5280444 | Dram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the same | Kaoru Motonami | 1994-01-18 |
| 5240872 | Method of manufacturing semiconductor device having interconnection layer contacting source/drain regions | Kaoru Motonami, Natsuo Ajika, Atsushi Hachisuka, Yasushi Matsui | 1993-08-31 |
| 5231041 | Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate | Hideaki Arima, Hideki Genjo, Ikuo Ogoh, Kohjiroh Yuzuriha, Yuichi Nakashima | 1993-07-27 |
| 5218221 | Semiconductor device and manufacturing method thereof | — | 1993-06-08 |
| 5212542 | Semiconductor device having at least two field effect transistors and method of manufacturing the same | — | 1993-05-18 |
| 5173752 | Semiconductor device having interconnection layer contacting source/drain regions | Kaoru Motonami, Natsuo Ajika, Atsushi Hachisuka, Yasushi Matsui | 1992-12-22 |
| 5164806 | Element isolating structure of semiconductor device suitable for high density integration | Masao Nagatomo, Hiroki Shimano, Tomonori Okudaira | 1992-11-17 |
| 5153689 | Semiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word lines | Takayuki Matsukawa, Ikuo Ogoh, Masao Nagatomo, Hideki Genjo, Atsushi Hachisuka | 1992-10-06 |
| 5101250 | Electrically programmable non-volatile memory device and manufacturing method thereof | Hideaki Arima, Hideki Genjo, Ikuo Ogoh, Kohjiroh Yuzuriha, Yuichi Nakashima | 1992-03-31 |
| 5032882 | Semiconductor device having trench type structure | Takayuki Matsukawa | 1991-07-16 |
| 4985368 | Method for making semiconductor device with no stress generated at the trench corner portion | Tatsuya Ishii, Masao Nagatomo | 1991-01-15 |
| 4984055 | Semiconductor device having a plurality of conductive layers and manufacturing method therefor | Atsuhiro Fujii, Masao Nagatomo, Hiroji Ozaki, Wataru Wakamiya, Takayuki Matsukawa | 1991-01-08 |
| 4956692 | Semiconductor device having an isolation oxide film | Hiroji Ozaki, Masahiro Yoneda, Ikuo Ogoh, Wataru Wakamiya, Masao Nagatomo | 1990-09-11 |
| 4953125 | Semiconductor memory device having improved connecting structure of bit line and memory cell | Akihiko Ohsaki, Kazuyuki Sugahara, Tatsuhiko Ikeda | 1990-08-28 |
| 4935380 | Method for manufacturing semiconductor device | — | 1990-06-19 |
| 4912535 | Trench type semiconductor memory device having side wall contact | — | 1990-03-27 |
| 4906591 | Method of manufacturing a semiconductor device having an electric contact portion | — | 1990-03-06 |
| 4894695 | Semiconductor device with no stress generated at the trench corner portion and the method for making the same | Tatsuya Ishii, Masao Nagatomo | 1990-01-16 |
| 4891327 | Method for manufacturing field effect transistor | — | 1990-01-02 |