Issued Patents All Time
Showing 1–25 of 59 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9202541 | Semiconductor apparatus configured to reduce data processing performance | Shuuichi SENOU, Kenjyu Shimogawa, Susumu Takano, Toshihiko Funaki | 2015-12-01 |
| 8759891 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2014-06-24 |
| 8471321 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2013-06-25 |
| 8362799 | Semiconductor device, and failure detection system and failure detection method of data hold circuit | — | 2013-01-29 |
| 7816204 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2010-10-19 |
| 7795648 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2010-09-14 |
| 7782700 | Semiconductor memory device | Kenichi Kuboyama | 2010-08-24 |
| 7754562 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2010-07-13 |
| 7439132 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2008-10-21 |
| 7368776 | Semiconductor device comprising a highly-reliable, constant capacitance capacitor | Yoshinori Tanaka, Masahiro Shimizu | 2008-05-06 |
| 7045420 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2006-05-16 |
| 6940116 | Semiconductor device comprising a highly-reliable, constant capacitance capacitor | Yoshinori Tanaka, Masahiro Shimizu | 2005-09-06 |
| 6762084 | Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor | Masahiro Shimizu, Yoshinori Tanaka | 2004-07-13 |
| 6194758 | Semiconductor device comprising capacitor and method of fabricating the same | Yoshinori Tanaka, Masahiro Shimizu | 2001-02-27 |
| 6066881 | Integrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistor | Masahiro Shimizu, Yoshinori Tanaka | 2000-05-23 |
| 5949110 | DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof | — | 1999-09-07 |
| 5892702 | Semiconductor memory device and method of manufacturing the same | Tatsuo Okamoto, Atsushi Hachisuka, Mitsuya Kinoshita | 1999-04-06 |
| 5798289 | Method of manufacturing stacked capacitors in a DRAM with reduced isolation region between adjacent capacitors | Natsuo Ajika, Atsushi Hachisuka | 1998-08-25 |
| 5763921 | Semiconductor device including retrograde well structure with suppressed substrate bias effects | Yoshinori Okumura, Masahiko Takeuchi | 1998-06-09 |
| 5683929 | Method of manufacturing a semiconductor device having a capacitor | Makoto Ohi, Natsuo Ajika | 1997-11-04 |
| 5672533 | Field effect transistor having impurity regions of different depths and manufacturing method thereof | Makoto Ohi, Natsuo Ajika, Atsushi Hachisuka, Tomonori Okudaira | 1997-09-30 |
| 5659191 | DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof | — | 1997-08-19 |
| 5612241 | Method of manufacturing a DRAM having peripheral circuitry in which source drain interconnection contact of a MOS transistor is made small by utilizing a pad layer | — | 1997-03-18 |
| 5597755 | Method of manufacturing a stacked capacitor in a dram | Natsuo Ajika, Atsushi Hachisuka | 1997-01-28 |
| 5523596 | Semiconductor device having capacitor and manufacturing method therefor | Makoto Ohi, Natsuo Ajika | 1996-06-04 |