MO

Makoto Ohi

Mitsubishi Electric: 17 patents #1,334 of 25,717Top 6%
📍 Kasai, JP: #485 of 5,842 inventorsTop 9%
Overall (All Time): #278,300 of 4,157,543Top 7%
17
Patents All Time

Issued Patents All Time

Showing 1–17 of 17 patents

Patent #TitleCo-InventorsDate
8306744 Vehicle-mounted equipment 2012-11-06
8265867 Route search system Hidekazu Arita 2012-09-11
8078393 Navigation apparatus 2011-12-13
5898606 Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor Shinichi Kobayashi, Yasushi Terada, Yoshikazu Miyawaki, Takeshi Nakayama, Tomoshi Futatsuya +4 more 1999-04-27
5745417 Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor Shinichi Kobayashi, Yasushi Terada, Yoshikazu Miyawaki, Takeshi Nakayama, Tomoshi Futatsuya +4 more 1998-04-28
5683929 Method of manufacturing a semiconductor device having a capacitor Hideaki Arima, Natsuo Ajika 1997-11-04
5672533 Field effect transistor having impurity regions of different depths and manufacturing method thereof Hideaki Arima, Natsuo Ajika, Atsushi Hachisuka, Tomonori Okudaira 1997-09-30
5538912 Method of making memory cells with peripheral transistors Yuichi Kunori, Natsuo Ajika, Hiroshi Onoda, Atsushi Fukumoto 1996-07-23
5523596 Semiconductor device having capacitor and manufacturing method therefor Hideaki Arima, Natsuo Ajika 1996-06-04
5489791 Field effect transistor having impurity regions of different depths and manufacturing method thereof Hideaki Arima, Natsuo Ajika, Atsushi Hachisuka, Tomonori Okudaira 1996-02-06
5400278 Semiconductor memory device and method of manufacturing the same Yuichi Kunori, Natsuo Ajika, Hiroshi Onoda, Atsushi Fukumoto 1995-03-21
5338957 Nonvolatile semiconductor device and a method of manufacturing thereof Atsushi Fukumoto, Hiroshi Onoda, Natsuo Ajika, Yuichi Kunori 1994-08-16
5338699 Method of making a semiconductor integrated device having gate sidewall structure Hideaki Arima, Natsuo Ajika, Atsushi Hachisuka, Yasushi Matsui 1994-08-16
5276344 Field effect transistor having impurity regions of different depths and manufacturing method thereof Hideaki Arima, Natsuo Ajika, Atsushi Hachisuka, Tomonori Okudaira 1994-01-04
5233212 Semiconductor device having gate electrode spacing dependent upon gate side wall insulating dimension Hideaki Arima, Natsuo Ajika, Atsushi Hachisuka, Yasushi Matsui 1993-08-03
5229314 Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation Tomonori Okudaira, Hideaki Arima, Kaoru Motonami, Yasushi Matsui 1993-07-20
5157469 Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators Tomonori Okudaira, Hideaki Arima, Kaoru Motonami, Yasushi Matsui 1992-10-20