Issued Patents All Time
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5898606 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yoshikazu Miyawaki, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +4 more | 1999-04-27 |
| 5745417 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yoshikazu Miyawaki, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +4 more | 1998-04-28 |
| 5659505 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yoshikazu Miyawaki, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +2 more | 1997-08-19 |
| 5615149 | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Shinichi Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya | 1997-03-25 |
| 5602778 | Nonvolatile semiconductor memory device with a row redundancy circuit | Tomoshi Futatsuya, Masaaki Mihara, Takeshi Nakayama, Yoshikazu Miyawaki, Shinichi Kobayashi +1 more | 1997-02-11 |
| 5554868 | Non-volatile semiconductor memory device | Masanori Hayashikoshi, Takeshi Nakayama, Yoshikazu Miyawaki, Shinichi Kobayashi | 1996-09-10 |
| 5548557 | Nonvolatile semiconductor memory device with a row redundancy circuit | Tomoshi Futatsuya, Masaaki Mihara, Takeshi Nakayama, Yoshikazu Miyawaki, Shinichi Kobayashi +1 more | 1996-08-20 |
| 5544117 | Non-volatile semiconductor memory device with improved collective erasing operation | Takeshi Nakayama, Kazuo Kobayashi, Masanori Hayashikoshi, Yoshikazu Miyawaki | 1996-08-06 |
| 5521863 | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Shinichi Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya | 1996-05-28 |
| 5485421 | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Shinichi Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya | 1996-01-16 |
| 5428568 | Electrically erasable and programmable non-volatile memory device and a method of operating the same | Shinichi Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya | 1995-06-27 |
| 5402382 | Nonvolatile semiconductor memory device capable of erasing by a word line unit | Yoshikazu Miyawaki, Takeshi Nakayama, Shinichi Kobayashi, Tomoshi Futatsuya | 1995-03-28 |
| 5371705 | Internal voltage generator for a non-volatile semiconductor memory device | Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya, Shinichi Kobayashi | 1994-12-06 |
| 5363330 | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Shinichi Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki, Tomoshi Futatsuya | 1994-11-08 |
| 5347490 | Nonvolatile semiconductor memory device | Takeshi Nakayama, Shinichi Kobayashi, Yoshikazu Miyawaki, Masanori Hayashikoshi | 1994-09-13 |
| 5297096 | Nonvolatile semiconductor memory device and data erasing method thereof | Takeshi Nakayama, Shinichi Kobayashi, Yoshikazu Miyawaki, Masanori Hayashikoshi, Tomoshi Futatsuya | 1994-03-22 |
| 5283758 | Non-volatile semiconductor memory device | Takeshi Nakayama, Kazuo Kobayashi, Masanori Hayashikoshi, Yoshikazu Miyawaki | 1994-02-01 |
| 5253210 | Paritioned bit line structure of EEPROM and method of reading data therefrom | — | 1993-10-12 |
| 5233610 | Semiconductor memory device having error correcting function | Takeshi Nakayama, Masanori Hayashikoshi, Kazuo Kobayashi, Yoshikazu Miyawaki | 1993-08-03 |
| 5132928 | Divided word line type non-volatile semiconductor memory device | Masanori Hayashikoshi, Kazuo Kobayashi, Takeshi Nakayama, Yoshikazu Miyawaki | 1992-07-21 |
| 5111427 | Nonvolatile content-addressable memory and operating method therefor | Kazuo Kobayashi, Takeshi Nakayama | 1992-05-05 |
| 5105384 | Low current semiconductor memory device | Kenji Noguchi, Takeshi Nakayama, Kazuo Kobayashi | 1992-04-14 |
| 5022009 | Semiconductor memory device having reading operation of information by differential amplification | Takeshi Nakayama, Kazuo Kobayashi | 1991-06-04 |
| 4970727 | Semiconductor integrated circuit having multiple self-test functions and operating method therefor | Yoshikazu Miyawaki, Masanori Hayashikoshi, Takeshi Nakayama, Kazuo Kobayashi | 1990-11-13 |
| 4958317 | Nonvolatile semiconductor memory device and a writing method using electron tunneling | Kazuo Kobayashi, Takeshi Nakayama | 1990-09-18 |