Issued Patents All Time
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8883636 | Process for semiconductor circuit | Zih-Song Wang, Shu-Cheng Lin | 2014-11-11 |
| 7002846 | Non-volatile semiconductor memory device with memory transistor | Hiromi Okimoto, Satoru Kishida, Daisuke Agawa | 2006-02-21 |
| 6996006 | Semiconductor memory preventing unauthorized copying | Shinichi Ishimoto, Shinji Kawai, Atsushi Ohba | 2006-02-07 |
| 6567316 | Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device | Atsushi Ohba, Satoshi Shimizu | 2003-05-20 |
| 6515908 | Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same | Satoshi Shimizu, Atsushi Ohba, Mitsuhiro Tomoeda | 2003-02-04 |
| 6515900 | Non-volatile memory with background operation function | Tamiyu Kato, Tomoshi Futatsuya | 2003-02-04 |
| 6483748 | Nonvolatile memory with background operation function | Tomoshi Futatsuya | 2002-11-19 |
| 6473345 | SEMICONDUCTOR MEMORY DEVICE WHICH CAN BE SIMULTANEOUSLY TESTED EVEN WHEN THE NUMBER OF SEMICONDUCTOR MEMORY DEVICES IS LARGE AND SEMICONDUCTOR WAFER ON WHICH THE SEMICONDUCTOR MEMORY DEVICES ARE FORMED | Takashi Hayasaka, Atsushi Ohba | 2002-10-29 |
| 6466508 | Semiconductor memory device having high-speed read function | Shinichi Kobayashi | 2002-10-15 |
| 6388921 | Nonvolatile semiconductor memory device with improved reliability and operation speed | Yasuhiro Yamamoto, Tomoshi Futatsuya | 2002-05-14 |
| 6385086 | Nonvolatile semiconductor memory device capable of high speed generation of rewrite voltage | Masaaki Mihara, Shinji Kawai | 2002-05-07 |
| 6330192 | Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device | Atsushi Ohba, Satoshi Shimizu | 2001-12-11 |
| 6243292 | Nonvolatile semiconductor memory device capable of reducing memory array area | Shinichi Kobayashi, Shinji Kawai, Tomoshi Futatsuya | 2001-06-05 |
| 6008674 | Semiconductor integrated circuit device with adjustable high voltage detection circuit | Tomohisa Wada, Masaaki Mihara, Yasuhiko Taito, Katsumi Dosaka | 1999-12-28 |
| 5959890 | Non-volatile semiconductor memory device | Yasuhiro Yamamoto, Masaaki Mihara | 1999-09-28 |
| 5940283 | High voltage generating device having variable boosting capability according to magnitude of load | Masaaki Mihara | 1999-08-17 |
| 5898606 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yasushi Terada, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +4 more | 1999-04-27 |
| 5745417 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yasushi Terada, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +4 more | 1998-04-28 |
| 5659505 | Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor | Shinichi Kobayashi, Yasushi Terada, Takeshi Nakayama, Tomoshi Futatsuya, Natsuo Ajika +2 more | 1997-08-19 |
| 5615149 | Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming | Shinichi Kobayashi, Takeshi Nakayama, Tomoshi Futatsuya, Yasushi Terada | 1997-03-25 |
| 5602778 | Nonvolatile semiconductor memory device with a row redundancy circuit | Tomoshi Futatsuya, Masaaki Mihara, Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi +1 more | 1997-02-11 |
| 5563824 | Nonvolatile semiconductor memory device and method of erasing stored data thereof | Takeshi Nakayama, Masaaki Mihara, Shinji Kawai, Minoru Ohkawa | 1996-10-08 |
| 5554868 | Non-volatile semiconductor memory device | Masanori Hayashikoshi, Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi | 1996-09-10 |
| 5548557 | Nonvolatile semiconductor memory device with a row redundancy circuit | Tomoshi Futatsuya, Masaaki Mihara, Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi +1 more | 1996-08-20 |
| 5544117 | Non-volatile semiconductor memory device with improved collective erasing operation | Takeshi Nakayama, Yasushi Terada, Kazuo Kobayashi, Masanori Hayashikoshi | 1996-08-06 |