YM

Yoshikazu Miyawaki

Mitsubishi Electric: 34 patents #359 of 25,717Top 2%
RT Renesas Technology: 2 patents #1,374 of 3,337Top 45%
ML Mitsubishi Electric Engineering Company, Limited: 1 patents #138 of 352Top 40%
PT Powerchip Technology: 1 patents #61 of 138Top 45%
📍 Kasai, JP: #145 of 5,842 inventorsTop 3%
Overall (All Time): #90,746 of 4,157,543Top 3%
37
Patents All Time

Issued Patents All Time

Showing 26–37 of 37 patents

Patent #TitleCo-InventorsDate
5521863 Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming Shinichi Kobayashi, Takeshi Nakayama, Tomoshi Futatsuya, Yasushi Terada 1996-05-28
5485421 Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming Shinichi Kobayashi, Takeshi Nakayama, Tomoshi Futatsuya, Yasushi Terada 1996-01-16
5428568 Electrically erasable and programmable non-volatile memory device and a method of operating the same Shinichi Kobayashi, Yasushi Terada, Takeshi Nakayama, Tomoshi Futatsuya 1995-06-27
5402382 Nonvolatile semiconductor memory device capable of erasing by a word line unit Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi, Tomoshi Futatsuya 1995-03-28
5371705 Internal voltage generator for a non-volatile semiconductor memory device Takeshi Nakayama, Yasushi Terada, Tomoshi Futatsuya, Shinichi Kobayashi 1994-12-06
5363330 Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming Shinichi Kobayashi, Takeshi Nakayama, Tomoshi Futatsuya, Yasushi Terada 1994-11-08
5347490 Nonvolatile semiconductor memory device Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi, Masanori Hayashikoshi 1994-09-13
5297096 Nonvolatile semiconductor memory device and data erasing method thereof Yasushi Terada, Takeshi Nakayama, Shinichi Kobayashi, Masanori Hayashikoshi, Tomoshi Futatsuya 1994-03-22
5283758 Non-volatile semiconductor memory device Takeshi Nakayama, Yasushi Terada, Kazuo Kobayashi, Masanori Hayashikoshi 1994-02-01
5233610 Semiconductor memory device having error correcting function Takeshi Nakayama, Yasushi Terada, Masanori Hayashikoshi, Kazuo Kobayashi 1993-08-03
5132928 Divided word line type non-volatile semiconductor memory device Masanori Hayashikoshi, Yasushi Terada, Kazuo Kobayashi, Takeshi Nakayama 1992-07-21
4970727 Semiconductor integrated circuit having multiple self-test functions and operating method therefor Masanori Hayashikoshi, Takeshi Nakayama, Kazuo Kobayashi, Yasushi Terada 1990-11-13