Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8525189 | Silicon carbide semiconductor device | Naoto Kaguchi, Takuyo Nakamura | 2013-09-03 |
| 8513763 | Silicon carbide semiconductor device | — | 2013-08-20 |
| 8461632 | SiC semiconductor device and method of manufacturing the same | Noriaki Tsuchiya | 2013-06-11 |
| 8350353 | Method of manufacturing silicon carbide semiconductor device | — | 2013-01-08 |
| 8258052 | Method of manufacturing silicon carbide semiconductor device | Koji Okuno | 2012-09-04 |
| 8252672 | Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same | Tomokatsu Watanabe, Sunao Aya, Naruhisa Miura, Keiko Sakai, Shohei Yoshida +3 more | 2012-08-28 |
| 8143094 | Silicon carbide semiconductor device and manufacturing method thereof | — | 2012-03-27 |
| 8115211 | Silicon carbide semiconductor device and manufacturing method thereof | — | 2012-02-14 |
| 8084278 | Method of manufacturing silicon carbide semiconductor device | Yukio Uda, Koichi Sekiya, Kazuo Kobayashi | 2011-12-27 |
| 8026160 | Semiconductor device and semiconductor device manufacturing method | Ken-ichi Ohtsuka, Masayuki Imaizumi | 2011-09-27 |
| 7939943 | Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer | Katsuomi Shiozawa, Kyozo Kanamoto, Toshiyuki Oishi, Hiroshi Kurokawa, Kenichi Ohtsuka +1 more | 2011-05-10 |
| 7919403 | Method of manufacturing silicon carbide semiconductor device | — | 2011-04-05 |
| 7678597 | Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact | Kenichi Ohtsuka, Yosuke Suzuki, Katsuomi Shiozawa, Kyozo Kanamoto, Toshiyuki Oishi +2 more | 2010-03-16 |
| 7564072 | Semiconductor device having junction termination extension | Kenichi Ohtsuka, Yoshinori Matsuno, Kenichi Kuroda, Hiroshi Sugimoto | 2009-07-21 |
| 7285465 | Method of manufacturing a SiC vertical MOSFET | Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami | 2007-10-23 |
| 7029969 | Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle | Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami | 2006-04-18 |
| 6307232 | Semiconductor device having lateral high breakdown voltage element | Hajime Akiyama | 2001-10-23 |