Issued Patents All Time
Showing 51–75 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9368714 | Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems | Gurtej S. Sandhu | 2016-06-14 |
| 9356229 | Memory cells and methods of fabrication | Wayne Kinney, Stephen J. Kramer | 2016-05-31 |
| 9331269 | Spin transfer torque memory cells | Manzar Siddik | 2016-05-03 |
| 9331271 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Cheng T. Horng, Ru-Ying Tong, Guangli Liu, Robert Beach, Tai Min | 2016-05-03 |
| 9224940 | Magnetic tunnel junction for MRAM applications | Wei Cao, Cheng T. Horng, Chyu-Jiuh Torng | 2015-12-29 |
| 9159908 | Composite free layer within magnetic tunnel junction for MRAM applications | Wei Cao | 2015-10-13 |
| 9054030 | Memory cells, semiconductor device structures, memory systems, and methods of fabrication | Wayne Kinney, Stephen J. Kramer | 2015-06-09 |
| 9048411 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Guenole Jan, Ru-Ying Tong | 2015-06-02 |
| 9006704 | Magnetic element with improved out-of-plane anisotropy for spintronic applications | Guenole Jan, Ru-Ying Tong, Cheng T. Horng | 2015-04-14 |
| 8981503 | STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain | Robert Beach, Guenole Jan, Yu-Jen Wang, Po-Kang Wang | 2015-03-17 |
| 8969982 | Bottom electrode for MRAM device | Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more | 2015-03-03 |
| 8962348 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Ru-Ying Tong, Yu-Jen Wang | 2015-02-24 |
| 8946834 | High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications | Yu-Jen Wang, Guenole Jan | 2015-02-03 |
| 8921961 | Storage element for STT MRAM applications | Guenole Jan, Ru-Ying Tong, Yu-Jen Wang | 2014-12-30 |
| 8923038 | Memory cells, semiconductor device structures, memory systems, and methods of fabrication | Gurtej S. Sandhu, Stephen J. Kramer | 2014-12-30 |
| 8900884 | MTJ element for STT MRAM | Ru-Ying Tong, Guenole Jan, Yu-Jen Wang | 2014-12-02 |
| 8878323 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Ru-Ying Tong, Yu-Jen Wang | 2014-11-04 |
| 8871365 | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications | Yu-Jen Wang, Ru-Ying Tong, Guenole Jan | 2014-10-28 |
| 8852760 | Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer | Yu-Jen Wang, Ru-Ying Tong, Guenole Jan | 2014-10-07 |
| 8786036 | Magnetic tunnel junction for MRAM applications | Wei Cao, Cheng T. Horng, Chyu-Jiuh Torng | 2014-07-22 |
| 8749003 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Cheng T. Horng, Ru-Ying Tong, Chyu-Jiuh Tomg | 2014-06-10 |
| 8736004 | Magnetic tunnel junction for MRAM applications | Wei Cao, Chyu-Jiuh Torng | 2014-05-27 |
| 8722543 | Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices | Rodolfo P. Belen, Rongfu Xiao, Tom Zhong, Chyu-Jiuh Torng | 2014-05-13 |
| 8609262 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Cheng T. Horng, Ru-Ying Tong, Guangli Liu, Robert Beach, Tai Min | 2013-12-17 |
| 8592927 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Guenole Jan, Ru-Ying Tong | 2013-11-26 |