Issued Patents All Time
Showing 76–88 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5808854 | Capacitor construction with oxidation barrier blocks | Paul J. Schuele | 1998-09-15 |
| 5776815 | Method for forming a contact intermediate two adjacent electrical components | Pai-Hung Pan | 1998-07-07 |
| 5763286 | Process for manufacturing a DRAM capacitor having an annularly-grooved, cup-shaped storage-node plate which stores charge on inner and outer surfaces | Angus C. Fox, III | 1998-06-09 |
| 5750441 | Mask having a tapered profile used during the formation of a semiconductor device | Bradley J. Howard | 1998-05-12 |
| 5696014 | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch | — | 1997-12-09 |
| 5661064 | Method of forming a capacitor having container members | Pierre C. Fazan | 1997-08-26 |
| 5654224 | Capacitor construction with oxidation barrier blocks | Paul J. Schuele | 1997-08-05 |
| 5597756 | Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack | Pierre C. Fazan | 1997-01-28 |
| 5559666 | Capacitor construction with oxidation barrier blocks | Paul J. Schuele | 1996-09-24 |
| 5488011 | Method of forming contact areas between vertical conductors | Kirk D. Prall | 1996-01-30 |
| 5472904 | Thermal trench isolation | Nanseng Jeng | 1995-12-05 |
| 5464786 | Method for forming a capacitor having recessed lateral reaction barrier layer edges | Paul J. Schuele | 1995-11-07 |
| 5438016 | Method of semiconductor device isolation employing polysilicon layer for field oxide formation | Nanseng Jeng | 1995-08-01 |