Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7723767 | High dielectric constant transition metal oxide materials | Jiutao Li | 2010-05-25 |
| 7718540 | Pitch reduced patterns relative to photolithography features | Luan C. Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah +7 more | 2010-05-18 |
| 7651951 | Pitch reduced patterns relative to photolithography features | Luan C. Tran, William T. Rericha, John Lee, Ramakanth Alapati, Sheron Honarkhah +7 more | 2010-01-26 |
| 7431966 | Atomic layer deposition method of depositing an oxide on a substrate | Garo Derderian, Danny Dynka | 2008-10-07 |
| 7410898 | Methods of fabricating interconnects for semiconductor components | Kyle K. Kirby, Garo Derderian | 2008-08-12 |
| 7390746 | Multiple deposition for integration of spacers in pitch multiplication process | Jingyi Bai, Gurtej S. Sandhu | 2008-06-24 |
| 7329615 | Atomic layer deposition method of forming an oxide comprising layer on a substrate | Garo Derderian, Demetrius Sarigiannis | 2008-02-12 |
| 7282239 | Systems and methods for depositing material onto microfeature workpieces in reaction chambers | Demetrius Sarigiannis, Garo Derderian | 2007-10-16 |
| 7279732 | Enhanced atomic layer deposition | Garo Derderian, Gurtej S. Sandhu | 2007-10-09 |
| 7253118 | Pitch reduced patterns relative to photolithography features | Luan C. Tran, William T. Rericha, John Lee, Raman Alapati, Sheron Honarkhah +7 more | 2007-08-07 |
| 7189642 | Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor components | Kyle K. Kirby, Garo Derderian | 2007-03-13 |
| 7172947 | High dielectric constant transition metal oxide materials | Jiutao Li | 2007-02-06 |
| 7119034 | Atomic layer deposition method of forming an oxide comprising layer on a substrate | Garo Derderian, Demetrius Sarigiannis | 2006-10-10 |
| 7071098 | Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles | Kyle K. Kirby, Garo Derderian | 2006-07-04 |
| 7067438 | Atomic layer deposition method of forming an oxide comprising layer on a substrate | Garo Derderian, Demetrius Sarigiannis | 2006-06-27 |
| 6967154 | Enhanced atomic layer deposition | Garo Derderian, Gurtej S. Sandhu | 2005-11-22 |
| 6943106 | Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling | Kyle K. Kirby, Garo Derderian | 2005-09-13 |
| 6844260 | Insitu post atomic layer deposition destruction of active species | Demetrius Sarigiannis, Garo Derderian | 2005-01-18 |