Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11664074 | Programming intermediate state to store data in self-selecting memory cells | Karthik Sarpatwari, Lingming Yang, Yen-Chun Lee, Jessica Chen, Francesco Douglas Verna-Ketel | 2023-05-30 |
| 11664073 | Adaptively programming memory cells in different modes to optimize performance | Karthik Sarpatwari, Fabio Pellizzer | 2023-05-30 |
| 11615854 | Identify the programming mode of memory cells during reading of the memory cells | Karthik Sarpatwari, Fabio Pellizzer | 2023-03-28 |
| 11616098 | Three-dimensional memory arrays, and methods of forming the same | Lingming Yang, Karthik Sarpatwari, Fabio Pellizzer, Lei Wei | 2023-03-28 |
| 11587635 | Selective inhibition of memory | Hongmei Wang, Mingdong Cui, Fabio Pellizzer | 2023-02-21 |
| 11568952 | Adjustable programming pulses for a multi-level cell | Xuan Anh Tran, Karthik Sarpatwari, Amitava Majumdar | 2023-01-31 |
| 11545194 | Dynamic read voltage techniques | Karthik Sarpatwari, Jessica Chen, Lingming Yang | 2023-01-03 |
| 11545216 | Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device | Karthik Sarpatwari, Fabio Pellizzer, Jessica Chen | 2023-01-03 |
| 11532347 | Performing refresh operations of non-volatile memory to mitigate read disturb | Karthik Sarpatwari, Lingming Yang, John Christopher Sancon | 2022-12-20 |
| 11527287 | Drift aware read operations | Karthik Sarpatwari, Lingming Yang, John F. Schreck | 2022-12-13 |
| 11514983 | Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cells | Karthik Sarpatwari, Fabio Pellizzer | 2022-11-29 |
| 11508437 | Restoring memory cell threshold voltages | Lingming Yang, Karthik Sarpatwari | 2022-11-22 |
| 11475970 | Bipolar read retry | Yen-Chun Lee, Karthik Sarpatwari | 2022-10-18 |
| 11430518 | Conditional drift cancellation operations in programming memory cells to store data | Hongmei Wang, Mingdong Cui | 2022-08-30 |
| 11404130 | Evaluation of background leakage to select write voltage in memory devices | Karthik Sarpatwari, Zhongyuan Lu | 2022-08-02 |
| 11367484 | Multi-step pre-read for write operations in memory devices | Yen-Chun Lee, Karthik Sarpatwari | 2022-06-21 |
| 11355209 | Accessing a multi-level memory cell | Karthik Sarpatwari, Xuan Anh Tran, Jessica Chen, Jason A. Durand, Yen-Chun Lee | 2022-06-07 |
| 11355554 | Sense lines in three-dimensional memory arrays, and methods of forming the same | Lingming Yang, Karthik Sarpatwari, Fabio Pellizzer, Lei Wei | 2022-06-07 |
| 11295822 | Multi-state programming of memory cells | Karthik Sarpatwari | 2022-04-05 |
| 11170853 | Modified write voltage for memory devices | Sandeepan Dasgupta, Sanjay Rangan, Koushik Banerjee, Mase J. Taub, Kiran Pangal | 2021-11-09 |
| 11139016 | Read refresh operation | Fabio Pellizzer, Karthik Sarpatwari, Innocenzo Tortorelli | 2021-10-05 |
| 11139023 | Memory operation with double-sided asymmetric decoders | Fabio Pellizzer, John F. Schreck | 2021-10-05 |
| 11139034 | Data-based polarity write operations | Karthik Sarpatwari, Hongmei Wang, Mingdong Cui | 2021-10-05 |
| 10964385 | Restoring memory cell threshold voltages | Lingming Yang, Karthik Sarpatwari | 2021-03-30 |
| 10943657 | Mitigation of voltage threshold drift associated with power down condition of non-volatile memory device | Karthik Sarpatwari, Fabio Pellizzer, Jessica Chen | 2021-03-09 |