Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8971089 | Low power phase change memory cell | Elijah V. Karpov, Kuo-Wei Chang | 2015-03-03 |
| 8945403 | Material test structure | Fabio Pellizzer, Innocenzo Tortorelli, Christina Papagianni, Jong Won Lee | 2015-02-03 |
| 8861293 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2014-10-14 |
| 8765581 | Self-aligned cross-point phase change memory-switch array | Jong Won Lee, Derchang Kau | 2014-07-01 |
| 8634226 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2014-01-21 |
| 8462537 | Method and apparatus to reset a phase change memory and switch (PCMS) memory cell | Elijah V. Karpov | 2013-06-11 |
| 8404514 | Fabricating current-confining structures in phase change memory switch cells | Jong Won Lee, Derchang Kau | 2013-03-26 |
| 8385100 | Energy-efficient set write of phase change memory with switch | Derchang Kau, Johannes Kalb, Elijah V. Karpov | 2013-02-26 |
| 8345472 | Three-terminal ovonic threshold switch as a current driver in a phase change memory | Jong Won Lee | 2013-01-01 |
| 8278641 | Fabricating current-confining structures in phase change memory switch cells | Jong Won Lee, Derchang Kau | 2012-10-02 |
| 8184469 | Stored multi-bit data characterized by multiple-dimensional memory states | Johannes A. Kalb, Derchang Kau | 2012-05-22 |
| 7990761 | Immunity of phase change material to disturb in the amorphous phase | George Andrew Gordon, Semyon D. Savransky, Ward Parkinson, Sergey Kostylev, James Reed +2 more | 2011-08-02 |
| 6504191 | Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor | Donald S. Gerber, Randy Yach, Kent Hewitt | 2003-01-07 |
| 6300183 | Independently programmable memory segments within a PMOS electrically erasable programmable read only memory array achieved by N-well separation and method therefor | Donald S. Gerber, Randy Yach, Kent Hewitt | 2001-10-09 |
| 6219279 | Non-volatile memory program driver and read reference circuits | Mihai-Costin Manolescu | 2001-04-17 |
| 5733795 | Method of fabricating a MOS read-only semiconductor memory array | Salvatore Spinella | 1998-03-31 |
| 5644154 | MOS read-only semiconductor memory with selected source/drain regions spaced away from edges of overlying gate electrode regions and method therefor | Salvatore Spinella | 1997-07-01 |