Issued Patents All Time
Showing 101–125 of 522 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8259491 | Coarse and fine programming in a solid state memory | Vishal Sarin, Jung Sheng Hoei | 2012-09-04 |
| 8254180 | Methods of operating memories including characterizing memory cell signal lines | Jung Sheng Hoei, Jonathan Pabustan, Vishal Sarin, William H. Radke | 2012-08-28 |
| 8243521 | Method for kink compensation in a memory | Violante Moschiano, Giovanni Santin, Vishal Sarin, Allahyar Vahidimowlavi, Tommaso Vali | 2012-08-14 |
| 8223551 | Soft landing for desired program threshold voltage | Vishal Sarin, Jung Sheng Hoei, Jonathan Pabustan | 2012-07-17 |
| 8218348 | Memory devices having strings of series-coupled memory cells selectively coupled to different bit lines | — | 2012-07-10 |
| 8213233 | Reduction of quick charge loss effect in a memory device | Vishal Sarin, William Saiki | 2012-07-03 |
| 8209477 | Non-volatile memory device having assignable network identification | — | 2012-06-26 |
| 8203886 | Memory device reference cell programming method and apparatus | Vishal Sarin | 2012-06-19 |
| 8199587 | Memory devices and their operation with different sets of logical erase blocks | — | 2012-06-12 |
| 8189382 | Read method for MLC | — | 2012-05-29 |
| 8179725 | Programming rate identification and control in a solid state memory | — | 2012-05-15 |
| 8174919 | Apparatus and method for increasing data line noise tolerance | Chia-Shing Jason Yu, Jung Sheng Hoei, Vishal Sarin | 2012-05-08 |
| 8174892 | Increased NAND flash memory read throughput | Dzung H. Nguyen | 2012-05-08 |
| 8174887 | Adjusting for charge loss in a memory | — | 2012-05-08 |
| 8169808 | NAND flash content addressable memory | — | 2012-05-01 |
| 8159874 | Cell operation monitoring | — | 2012-04-17 |
| 8134872 | Apparatus and methods for programming multilevel-cell NAND memory devices | — | 2012-03-13 |
| 8127091 | Programming memory cells with additional data for increased threshold voltage resolution | Vishal Sarin | 2012-02-28 |
| 8125831 | Sensing against a reference cell | Vishal Sarin | 2012-02-28 |
| 8117375 | Memory device program window adjustment | Vishal Sarin, Jonathan Pabustan, Jung Sheng Hoei | 2012-02-14 |
| 8111550 | M+N bit programming and M+L bit read for M bit memory cells | Vishal Sarin, Jung Sheng Hoei | 2012-02-07 |
| 8107296 | Mitigation of data corruption from back pattern and program disturb in a non-volatile memory device | Vishal Sarin, Jung Sheng Hoei | 2012-01-31 |
| 8103940 | Programming error correction code into a solid state memory device with varying bits per cell | Vishal Sarin, Jung Sheng Hoei | 2012-01-24 |
| 8103805 | Configuration finalization on first valid NAND command | — | 2012-01-24 |
| 8102706 | Programming a memory with varying bits per cell | Vishal Sarin, Jung Sheng Hoei | 2012-01-24 |