| 9423969 |
Sensing operations in a memory device |
Vishal Sarin, Dzung H. Nguyen |
2016-08-23 |
$14,792,000 |
| 9123423 |
Programming operations in a memory device |
Vishal Sarin, Dzung H. Nguyen |
2015-09-01 |
$10,392,000 |
| 8773912 |
Soft landing for desired program threshold voltage |
Vishal Sarin, Frankie F. Roohparvar, Jung Sheng Hoei |
2014-07-08 |
$11,268,000 |
| 8737127 |
Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits |
Vishal Sarin, Jung Sheng Hoei, Frankie F. Roohparvar |
2014-05-27 |
$8,446,000 |
| 8713246 |
Memory device program window adjustment |
Vishal Sarin, Frankie F. Roohparvar, Jung Sheng Hoei |
2014-04-29 |
$9,450,000 |
| 8611156 |
Sensing operations in a memory device |
Vishal Sarin, Dzung H. Nguyen |
2013-12-17 |
$5,079,000 |
| 8385121 |
Memory adapted to program a number of bits to a memory cell and read a different number of bits from the memory cell |
Vishal Sarin, Jung Sheng Hoei, Frankie F. Roohparvar |
2013-02-26 |
$3,320,000 |
| 8307152 |
Memory device program window adjustment |
Vishal Sarin, Frankie F. Roohparvar, Jung Sheng Hoei |
2012-11-06 |
$4,018,000 |
| 8274835 |
Mitigation of runaway programming of a memory device |
Vishal Sarin, Frankie F. Roohparvar |
2012-09-25 |
$2,699,000 |
| 8254180 |
Methods of operating memories including characterizing memory cell signal lines |
Jung Sheng Hoei, Vishal Sarin, William H. Radke, Frankie F. Roohparvar |
2012-08-28 |
$3,290,000 |
| 8243523 |
Sensing operations in a memory device |
Vishal Sarin, Dzung H. Nguyen |
2012-08-14 |
$3,153,000 |
| 8223551 |
Soft landing for desired program threshold voltage |
Vishal Sarin, Frankie F. Roohparvar, Jung Sheng Hoei |
2012-07-17 |
$3,261,000 |
| 8169832 |
Methods of erase verification for a flash memory device |
Vishal Sarin, Dzung H. Nguyen, Jung Sheng Hoei, Jason Guo, William Saiki |
2012-05-01 |
$6,042,000 |
| 8117375 |
Memory device program window adjustment |
Vishal Sarin, Frankie F. Roohparvar, Jung Sheng Hoei |
2012-02-14 |
$4,010,000 |
| 8023334 |
Program window adjust for memory cell signal line delay |
Jung Sheng Hoei, Vishal Sarin, William H. Radke, Frankie F. Roohparvar |
2011-09-20 |
$3,026,000 |
| 7974136 |
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio |
Geeng-Chuan Chern, Ben Sheen, Der-Tsyr Fan, Yaw Wen Hu, Prateep Tuntasood |
2011-07-05 |
|
| 7864589 |
Mitigation of runaway programming of a memory device |
Vishal Sarin, Frankie F. Roohparvar |
2011-01-04 |
$2,617,000 |
| 7843725 |
M+L bit read column architecture for M bit memory cells |
Vishal Sarin, Jung Sheng Hoei, Frankie F. Roohparvar |
2010-11-30 |
$5,053,000 |
| 7835190 |
Methods of erase verification for a flash memory device |
Vishal Sarin, Dzung H. Nguyen, Jung Sheng Hoei, Jason Guo, William Saiki |
2010-11-16 |
$2,850,000 |
| 7668013 |
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio |
Geeng-Chuan Chern, Ben Sheen, Prateep Tuntasood, Der-Tsyr Fan, Yaw Wen Hu |
2010-02-23 |
$3,868,000 |
| 7434092 |
Semiconductor memory and method of storing configuration data |
Chih-Chieh Wang, Ben Sheen |
2008-10-07 |
$3,222,000 |
| 7239550 |
Method of programming a non-volatile memory cell |
Ben Sheen |
2007-07-03 |
$1,706,000 |
